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| CM200DU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMODTM U-Series Module 200 Amperes/1200 Volts A D T - (4 TYP.) H G2 F BE C L CM C2E1 E2 C1 E2 E1 G1 J H U S - NUTS (3 TYP) Q Q P N G K K K R M C L Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G2 E2 C2E1 E2 C1 E1 G1 Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-24H is a 1200V (VCES), 200 Ampere Dual IGBTMODTM Power Module. Type CM Current Rating Amperes 200 VCES Volts (x 50) 24 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 4.25 2.44 Millimeters 108.0 62.0 Dimensions L M N P Q R S T U Inches 0.87 0.33 0.10 0.85 0.98 0.11 M6 0.26 Dia. 0.002 Millimeters 22.0 8.5 2.5 21.5 25.0 2.8 M6 6.5 Dia. 0.05 1.14 +0.04/-0.02 29.0 +1.0/-0.5 3.660.01 1.880.01 0.67 0.16 0.24 0.59 0.55 93.00.25 48.00.25 17.0 4.0 6.0 15.0 14.0 57 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-24H Dual IGBTMODTM U-Series Module 200 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM200DU-24H -40 to 150 -40 to 125 1200 20 200 400* 200 400* 1130 40 40 400 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 20mA, VCE = 10V IC = 200A, VGE = 15V, Tj = 25C IC = 200A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage* VCC = 600V, IC = 200A, VGE = 15V IE = 200A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6 2.9 2.85 750 - Max. 1 0.5 7.5 3.7 - - 3.2 Units mA A Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, TTj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 200A, VGE1 = VGE2 = 15V, RG = 1.6 , Resistive Load Switching Operation IE = 200A, diE/dt = -400A/s IE = 200A, diE/dt = -400A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 1.1 Max. 30 10.5 6 200 300 300 350 300 - Units nf nf nf ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT 1/2 Module Per FWDi 1/2 Module Per Module, Thermal Grease Applied Min. - - - Typ. - - 0.020 Max. 0.11 0.18 - Units C/W C/W C/W 58 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-24H Dual IGBTMODTM U-Series Module 200 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 400 COLLECTOR CURRENT, IC, (AMPERES) 320 240 VGE = 20V 11 320 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 400 15 COLLECTOR CURRENT, IC, (AMPERES) 5 VCE = 10V Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C 12 4 3 2 1 240 160 80 10 160 80 0 9 8 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 0 80 160 240 320 400 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C 102 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) VGE = 0V f = 1MHz 8 IC = 400A EMITTER CURRENT, IE, (AMPERES) 101 6 IC = 200A Cies 102 4 2 100 Coes IC = 80A Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -400A/sec Tj = 25C REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, trr, (ns) 103 tf td(off) td(on) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 200A 16 12 8 4 VCC = 400V SWITCHING TIME, (ns) trr VCC = 600V 102 102 Irr 101 tr VCC = 600V VGE = 15V RG = 1.6 Tj = 125C 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 0 0 250 500 750 1000 GATE CHARGE, QG, (nC) 59 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-24H Dual IGBTMODTM U-Series Module 200 Amperes/1200 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS ( IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.11C/W 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.18C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 60 |
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